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| SMG2304 2.7A, 25V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L Description The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S 2 3 Top View SC-59 Dim B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 A B D G C D C J K Features * Reliable And Rugged * Super High Dense Cell Design For Extremely Low RDS(ON) H Drain Gate Source G H J K L S Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System G D All Dimension in mm Marking : 2304 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 25 20 2.7 2.2 10 1.38 0.01 -55~+150 Unit V V A A A W W / oC o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SMG2304 2.7A, 25V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 o o Unless otherwise specified) Symbol BVDSS Min. 25 _ Typ. _ Max. _ _ Unit V V/ V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=20V VDS=25V,VGS=0 VDS=25V,VGS=0 VGS=10V, ID=2.5A o BVDS/ Tj VGS(th) IGSS IDSS 0.1 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 10 117 190 10 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ m[ VGS=4.5V, ID=2A ID=2.5A VDS=15V VGS=10V Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 5.9 0.8 2.1 4.5 11.5 12 3 110 85 39 3.4 nC _ _ _ _ _ _ _ VDS=15V ID=1A nS VGS=10V RG=6 [ RD=15[ _ _ _ _ _ _ pF VGS=0V VDS=15V f=1.0MHz _ _ S VDS=4.5V, ID=2.5A Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Symbol VSD Is ISM Min. _ _ Typ. _ Max. 1.2 1 Unit V Test Condition IS=1.25A ,VGS=0,Tj=25 C VD=VG=0V,VS=1.2V o _ _ A _ 10 A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SMG2304 2.7A, 25V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SMG2304 2.7A, 25V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SMG2304 2.7A, 25V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 |
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